|
|
|
|
|
Computing
Improved performance and the trend towards multi-core computing is driving the need for next generation high end
computing systems. These systems require significantly more memory with extremely fast access rates and high
reliability along with very high speed interfaces, both serial SerDes, running at 8Gbs and higher and parallel interfaces
such as DDR3.
MoSys differentiated and patented 1T-SRAM embedded memory IP enables next generation computing SoCs to have
3 times the density in the same area and 50% lower power consumption than 6T-based memory. In addition, 1T-SRAM
has ultra-low latency random access and superior reliability, with dramatically reduced SER (soft error rate)
susceptibility. MoSys 1T-SRAM is a perfect fit for high density, low latency on-chip caches in computing SoCs.
MoSys' differentiated, silicon-proven, high speed interface IP supports data rates from 1Gbs to 10Gbs and above and
all of the key protocols for computing applications, including PCI Express Gen 3, which operates at 8 Gbps and
DDR 3/2. In addition to delivering 'off-the-shelf ' IP macros, MoSys will customize our SerDes and DDR IP to precisely
meet your design requirements.
|
|
|
|
Products 
