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About MoSys
Company Overview
MoSys, Inc. is a leading provider of high-density memory and high-speed interface (I/O) intellectual property (IP). The Company expanded its business model and market opportunity in 2010 by leveraging its differentiated IP to become a fabless semiconductor company.
Technology Offerings
MoSys’ first integrated circuit (IC), the Bandwidth Engine™, combines the company’s patented, high-density 1T-SRAM® technology with its ultra high-speed 10 Gbps SerDes I/O technology to create a breakthrough, serial chip-to-chip communications solution that delivers unparalleled bandwidth performance for next generation networking systems. Bandwidth Engine provides up to 2 billion accesses per second – more than twice the performance of memory technologies.
The Bandwidth Engine’s benefits include:
- Enabling up to 4 times the throughput
- 2-4 times the density of today’s SRAM devices
- Up to 40% lower power
- Up to 50% system cost savings
Samples of the Bandwidth Engine IC will be available in Q4 2010, with volume ramping over the next year.
MoSys also offers the GigaChip™ Interface -- an open, CEI-11 compatible interface protocol -- that enables highly efficient serial chip-to-chip communications in high-speed networking systems. The GigaChip Interface is easy to implement and achieves greater than 90% payload bandwidth efficiency. The GigaChip Interface will be supported in MoSys’ Bandwidth Engine product.
MoSys’ silicon-proven SerDes support a wide range of protocols from 1.25 Gbps to 11.3 Gbps and DDR3 support protocols from 800 Mbps to 2133 Mbps, providing chip designers access to risk-free silicon-proven PHYs which offer optimized power consumption at advanced process nodes and have proven interoperability with industry standard memory controllers. Supported protocols include CEI-11, 10G KR, XAUI, RXAUI, PCI Express Gen 2 and SATA.
MoSys' patented 1T-SRAM® technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology achieves much higher density than traditional 4 or 6 transistor SRAMs, while its innovative architecture allows the use of standard logic manufacturing processes.
Intellectual Property
MoSys has more than 150 granted patents, 50 patents pending and is production-proven in more than 225 million devices. |
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